| PART |
Description |
Maker |
| BC847S |
Multi-Chip TRANSISTOR (NPN)
|
SHENZHEN YONGERJIA INDUSTRY CO.,LTD
|
| ZTX649DA ZTX649DB ZTX649DC ZTX749DA |
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | CHIP
Transient Voltage Suppressor Diodes 晶体管|晶体管|进步党| 25V的五（巴西）总裁|芯片
TRANSISTOR|BJT|NPN|25VV(BR)CEO|CHIP
TRANSISTOR|BJT|NPN|45VV(BR)CEO|CHIP
|
Fairchild Semiconductor, Corp.
|
| BUP54.MODR1 BUP5409 |
50 A, 275 V, NPN, Si, POWER TRANSISTOR, TO-3 TO-3B, 2 PIN
SILICON MULTI-EPITAXIAL NPN TRANSISTOR
|
TT electronics Semelab, Ltd.
Seme LAB
|
| CMLM0405 |
MULTI DISCRETE MODULESURFACE MOUNT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Central Semiconductor, Corp.
|
| BC847S |
NPN Multi-Chip General Purpose Amplifier
|
Fairchild Semiconductor
|
| MMPQ3904 FFB3904 FFB3904_1 FMB3904 FMB3904NL MMPQ3 |
NPN Multi-Chip General Purpose Amplifier
|
FAIRCHILD[Fairchild Semiconductor]
|
| BC847S |
Multi-Chip Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| UMD3N |
Multi-Chip Digital Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| MMDT2907A |
PNP Silicon Multi-Chip Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| TPCP8F01 |
TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| BUX12 |
NPN MULTI - EPITAXIAL POWER TRANSISTOR
|
New Jersey Semi-Conductor P...
|
